Title:
FORMATION OF COBALT SILICIDE FILM
Document Type and Number:
Japanese Patent JPH1045416
Kind Code:
A
Abstract:
To provide a method for forming a low-resistance cobalt silicide film which does not induce a fine line effect.
A cobalt film 6 is formed on semiconductor layers 3, 4 contg. silicon and is subjected to a first heat treatment by lamp annealing, by which the cobalt silicide film 7 is formed. The unreacted cobalt film 6 is removed. The cobalt silicide film 7 is subjected to a heat treatment by lamp annealing, by which the cobalt silicide film 8 is formed.
Inventors:
CHIBA YASUHIRO
Application Number:
JP20266196A
Publication Date:
February 17, 1998
Filing Date:
July 31, 1996
Export Citation:
Assignee:
SONY CORP
International Classes:
C01G51/00; C01B33/06; C22F1/10; C23C14/06; H01L21/28; (IPC1-7): C01G51/00; C01B33/06; C22F1/10; C23C14/06
Attorney, Agent or Firm:
Hidekuma Matsukuma