Title:
CZ成長中のシリコン単結晶側表面から誘起される凝集点欠陥および酸素クラスターの形成制御
Document Type and Number:
Japanese Patent JP5138678
Kind Code:
B2
Abstract:
The present invention relates to a single crystal silicon ingot or wafer wherein the lateral incorporation effect of intrinsic point defects has been manipulated such that the formation of agglomerated intrinsic point defects and/or oxygen precipitate clusters in a ring extending radially inward from about the lateral surface of the ingot segment is limited.
Inventors:
Mirind S. Kulkarni
Application Number:
JP2009511251A
Publication Date:
February 06, 2013
Filing Date:
May 18, 2007
Export Citation:
Assignee:
MEMC ELECTRONIC MATERIALS,INCORPORATED
International Classes:
C30B29/06; C30B15/20
Domestic Patent References:
| JP2004525057A | ||||
| JP2001503009A | ||||
| JP2005506261A |
Attorney, Agent or Firm:
Samejima Mutsumi
Kyousei Tamura
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Kyousei Tamura
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