Title:
FORMATION OF DEPOSITED FILM
Document Type and Number:
Japanese Patent JPS60247918
Kind Code:
A
Abstract:
PURPOSE:To form a deposited film using heat energy of a low level by a method wherein a silicon compound having a cyclic construction consisting of Si and C, and a compound containing atoms belong to the III group or the V group on the periodic table are excited to be decomposed. CONSTITUTION:A supporter 2 is set up in a deposition chamber 1, the inside of the chamber 1 is depressurized, and a current is flowed to a heater 4. Then, raw material mixed gas sent from a raw material supply source 9 filled with an Si compound, and a raw material supply source 10 filled with gas for impurity introduction is introduced into the deposition chamber 1. At this time, gas for impurity introduction contains atoms belong to the III group or the V group on the periodic table. Moreover, the Si compound is indicated by the formula (provided that, R<1> and R<2> indicate H or CH3 group independently, the number of C indicates the alkyl group of 1-3, (m) indicates the integer of 3-7, and (n) indicates the integer of 1-11). By exciting and decomposing both the compounds utilizing heat energy, a deposited film is formed on the supporter.
Inventors:
NISHIMURA YUKIO
MATSUDA HIROSHI
HARUTA MASAHIRO
HIRAI YUTAKA
EGUCHI TAKESHI
NAKAGIRI TAKASHI
MATSUDA HIROSHI
HARUTA MASAHIRO
HIRAI YUTAKA
EGUCHI TAKESHI
NAKAGIRI TAKASHI
Application Number:
JP10539184A
Publication Date:
December 07, 1985
Filing Date:
May 23, 1984
Export Citation:
Assignee:
CANON KK
International Classes:
H01L51/42; C23C16/24; H01L21/205; (IPC1-7): H01L21/205; H01L31/04
Attorney, Agent or Firm:
Marushima Giichi