Title:
FORMATION OF DEPOSITED FILM
Document Type and Number:
Japanese Patent JPS61110424
Kind Code:
A
Abstract:
PURPOSE:To improve electrical, optical, photoconductive and mechanical characteristics of film and realize high speed formation of film at a low substrate temperature by exciting and reacting oxygen compound with optical energy in a film forming space for forming a deposited film. CONSTITUTION:The active seed produced by decomposing a compound including germanium and halogen and the oxygen compound which chemically reacts with the active seed are separately introduced into a film forming space. The starting materials are irradiated with optical energy in order to excite and react the oxygen compound and thereby a deposited film is formed on a substrate. For example, a polyethylenetelephtalate film substrate 103 is placed on a support 102, the deposition space 101 is exhausted and O2 is supplied into the deposition space at a substrate temperature of about 50 deg.C. The decomposition space 102 is filled with solid Ge grain 114. It is heated to fuse, Ge. Here, GeF4 is blown in order to produce active seed and it is then supplied to the film forming space 101. While air pressure is kept at 0.1Torr, the substrate is irradiated with the light of 1kWXe lamp and thereby amorphous deposited film including oxygen can be formed.
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Inventors:
ISHIHARA SHUNICHI
HIROOKA MASAAKI
ONO SHIGERU
HIROOKA MASAAKI
ONO SHIGERU
Application Number:
JP23127884A
Publication Date:
May 28, 1986
Filing Date:
November 05, 1984
Export Citation:
Assignee:
CANON KK
International Classes:
H01L31/04; H01L21/205; H01L21/263; H01L31/0248; (IPC1-7): H01L21/263; H01L31/04; H01L31/08
Attorney, Agent or Firm:
Yamashita