PURPOSE: To form a dielectric film having good quality with decreased leak currents at a stable and high film forming speed without a change of a target with lapse of time by superposing DC electric power and high-frequency electric power and executing film formation sputtering.
CONSTITUTION: The DC electric power and high-frequency electric power are superposed and are impressed on the target material in the method for forming the dielectric film on a substrate by a sputtering method using the ceramic material of ≤10Ω.cm in the electric resistance measured at 1.5V applied voltage in a film thickness direction. As a result, the high-speed film formation is executed without the change of the target with lapse of time and without generating abnormal electric discharge by dielectric breakdown and dust and the generation of crazing in the target. Further, the formation of the dielectric film having the excellent leak current characteristic is possible.
ISHIKAWA MICHIO
SUZUKI IKUO
NAKAMURA KYUZO
SUU KOUKOU
