Title:
FORMATION OF ELEMENT SEPARATING FILM OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3923584
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a method for forming element separating film of semiconductor device by which the element separating characteristic and electrical characteristic of a semiconductor device can be improved.
SOLUTION: A recess is formed by partially etching the central part of a first oxide film 36 formed in the element separating area on a semiconductor substrate 30 to a prescribed depth. Then an element separating film having an edge section composed of the film 36 and a central part composed of a second oxide film 40 is formed by forming the film 40 by only selectively thermally oxidizing the recessed part of the film 36. The film 36 is formed to a thickness of about 1,000&angst to 2,000&angst at which no bird's beak occurs by using the LOCOS(local oxidation of silicon) method and the film 40 is formed to a thickness of about 1,500&angst to 3,000&angst by using nitride spacers 38.
More Like This:
Inventors:
Hiroshi Ando
Application Number:
JP5880897A
Publication Date:
June 06, 2007
Filing Date:
March 13, 1997
Export Citation:
Assignee:
Samsung Electronics Co.,Ltd.
International Classes:
H01L21/316; H01L21/26; H01L21/76; (IPC1-7): H01L21/316; H01L21/76
Domestic Patent References:
| JP63152155A | ||||
| JP5291243A | ||||
| JP7106320A |
Attorney, Agent or Firm:
Masaki Hattori
Previous Patent: INTERNAL GEAR TYPE HYDRAULIC MACHINE
Next Patent: PAPER CONTAINER HAVING IDENTIFICATION INDICATOR AND ITS MANUFACTURE
Next Patent: PAPER CONTAINER HAVING IDENTIFICATION INDICATOR AND ITS MANUFACTURE