Title:
FORMATION OF FERROELECTRIC THIN FILM AND PRECURSOR SOLUTION USED IN THE SAME FORMATION
Document Type and Number:
Japanese Patent JPH10297922
Kind Code:
A
Abstract:
To increase voltage applied to a ferroelectric film in ferroelectric transistor utilizing the ferroelectric film.
A sample 20 has a structure obtained by successively laminating SiO2 film 12, Pt film 14, ferroelectric film 16 and Pt film 18 onto an Si wafer 10 and uses Bi2MoO6 film as a ferroelectric film. Bi2MoO6 precursor solution obtained by mixing 1-methoxy-2-propanol solution of Bi2(O-nC4H9)3 with 1- methoxy-2-propanol solution of Mo(OC2H5)5 is used as a precursor solution for formation of Bi2(O-nC4H9).
Inventors:
KOIWA ICHIRO
MITA MITSURO
FURUYAMA KOICHI
MITA MITSURO
FURUYAMA KOICHI
Application Number:
JP10774297A
Publication Date:
November 10, 1998
Filing Date:
April 24, 1997
Export Citation:
Assignee:
OKI ELECTRIC IND CO LTD
TOYOSHIMA SEISAKUSHO KK
TOYOSHIMA SEISAKUSHO KK
International Classes:
C01G29/00; C01G39/00; C01G41/00; C30B33/02; H01B3/00; (IPC1-7): C01G29/00; C01G39/00; C01G41/00; C30B33/02; H01B3/00
Attorney, Agent or Firm:
Takashi Ogaki
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