FORMATION OF FERROELECTRICS FILM

Japanese Patent JP3085285

B2

PROBLEM TO BE SOLVED: To obtain a high remanence value, high anti-electric field value and small leak current value by forming ferroelectrics crystalline nucleus precursor layer of a specific thickness on a heterogeneous underlying material, and heat treating the same for forming ferroelectrics crystalline nucleus layer to completely inhibit the occurrence of void on the neighborhood of an underlying interface.
SOLUTION: The ferroelectrics crystalline nucleus precursor layer of a thickness more than 5 nm and less than 20 nm, is formed on a heterogeneous underlying material. Preferably the heating treatment of the ferroelectric precursor layer is performed at a temperature lower than a temperature in the formation of the ferro-dielectric crystalline uncleus layer, and a composition ratio of metallic elements at least excluding oxygen, in the ferroelectric precursor layer is almost same as that in the ferroeletric crystalline nucleus layer. Preferably, a deposition speed of the initial deposition for depositing the ferroelectric layer directly on a heterogeneous underlying substrate is lower than that in a later stage of the position, and the deposition speed of the initial deposition is more than 1 nm/min. and less than 5 nm/min.. A thickness of the deposition initial layer is more than 5 nm and less than 30 nm. Further the deposition speed of the disposition later period is ore than 5 nm/min. and less than 20 nm/min.

Nobuyuki Igarashi

JP22963898A

September 04, 2000

August 14, 1998

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NEC

H01L27/04; H01B3/00; H01L21/822; H01L21/8242; H01L21/8246; H01L27/10; H01L27/105; H01L27/108; (IPC1-7): H01B3/00; H01L21/822; H01L21/8242; H01L27/04; H01L27/10; H01L27/108

JP451407A

Yasuyuki Hata

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