PURPOSE: To efficiently form a film on a low-temp. substrate by imparting crystal lattice forming energy by controlling gas pulses of a specific length with time in such a manner that these pulses arrive at the substrate just before or just after the peeled particles.
CONSTITUTION: A target 3 consisting of an alloy, etc., is peeled by a laser beam 2 or pseudo flash in a film coating chamber 1. The formed and released particles are supplied via a plasma cloud 4 to the substrate 5 and are deposited thereon, thereby forming the film. At this time, the gas pulses 8 of a fraction or above of 1 μs to 10 ms are radiated toward the substrate 5 surface from a nozzle 7 arranged near the pseudo flash 5. The gas pulses 8 are controlled with time in such a manner that the pulses arrive as ultrasonic-molecular beams (or atom beams) at the substrate 5 just before or just after the peeled particles or during the deposition just before the particles. As a result, the additional energy for finding the position of the crystal lattice is imparted. The temp. of the substrate 5 is preferably regulated to <600°C, more particularly <500°C via a superheater 6.
UERUNA RAIRANTO
MARUKO DEIIGERU
ERIKU FUON DERU BURUKU
BORUFUGANKU GURIRU
