PURPOSE: To deposit a film material to only a through defect part and to form a protective film free from the through defect, by forming the required film on the surface of a base material and thereafter occluding hydrogen into the base material for the film and performing chemical vapor deposition reaction by hydrogen reduction.
CONSTITUTION: A film having required corrosion resistance and heat resistance or the like is formed on the surface of a base material by means of an arbitrary method such as thermal spraying, plating and vapor deposition. Then hydrogen is occluded into the base material for the film by electrolyzing the film or pressurizing and heat-treating it in hydrogen. Gasses other than hydrogen contained is gaseous raw material for chemical vapor deposition wherein hydrogen reducing reaction is utilized are allowed to flow to the obtained film and allowed to react with each other. Thereby the film free from a through defect is obtained by causing reducing reaction with hydrogen discharged from the base material through the through defect part of film and depositing the film material to only the through defect part by chemical vapor deposition reaction.
WADA TETSUYOSHI