Title:
FORMATION OF FINE PATTERN AND MASK FOR EXPOSING
Document Type and Number:
Japanese Patent JP3234084
Kind Code:
B2
Abstract:
PURPOSE: To provide a method for forming fine patterns capable of exposing isolated patterns with a high resolution similar to the resolution of L/S patterns without entailing difficulty in mask production.
CONSTITUTION: This method for forming the fine patterns which transfers the fine patterns formed on the mask via a projection optical system onto an Si wafer includes a stage for forming two layers of photosensitive films 222, 223 on the Si wafer 221, a stage for exposing the upper layer film 223 by using a first mask 210 provided with apertures 213 of a size larger than about the same size of main patterns for pattern formation and a stage for exposing the lower layer film 221 by using the second mask 230 provided with main patterns 233 for forming patterns and auxiliary patterns 234 of a size approximately the same as the size of the patterns near these main patterns. The transferred images of the apertures 213 of the first mask 210 and the transferred images of the main patterns 233 of the second mask 230 are so positioned as to overlap on each other.
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Inventors:
Soichi Inoue
Ichiro Mori
Takeshi Shibata
Ichiro Mori
Takeshi Shibata
Application Number:
JP35421493A
Publication Date:
December 04, 2001
Filing Date:
December 28, 1993
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
G03F1/30; G03F1/32; G03F1/36; G03F1/68; G03F7/20; H01L21/027; (IPC1-7): G03F1/08; H01L21/027
Domestic Patent References:
| JP3245145A | ||||
| JP509547B1 |
Attorney, Agent or Firm:
Takehiko Suzue