PURPOSE: To attain a resist pattern having a smooth outline, by forming edges of recessed parts and projecting parts into smooth lines having a width close to the resolution limit of an exposure device.
CONSTITUTION: When a mask pattern 1' is transferred, resolution defects are generated in both ends of linear parts 2" and 3", namely, edge parts of the mask pattern and edge parts 4' are rounded because an optical system has a resolution limit. When lengths l2 and l3 of linear parts 2" and 3" are proper, rounded edge parts 4' at both ends are connected smoothly in the shape of the resist pattern, and the width of recessed parts and projecting parts has dimensions as designed, and the resist pattern of an ion-implanted transfer path having a desired shape is attained. The quantity of rounding is determined by the resolution limit of a used projecting optical system. This resolution limit is expressed with the numerical aperture NA and the wavelength λ of the optical system. Optimum values of lengths l2 and l3 of flat parts of recessed parts and projecting parts are between λ/2NA and λ/NA.
UMEZAKI HIROSHI
MARUYAMA YOUJI
IKEDA HITOSHI
SUGITA KEN
