PURPOSE: To obtain a formation method of a high-melting-point-metal multilayer film whose close contact property with reference to a substratum insulating film is excellent not only immediately after formation of a high-melting-point-metal silicide film but also after its heat-treatment process by a method wherein the high-melting- point-metal silicide film of a polycrystalline structure is formed in a state immediately after its formation and a high-melting-point-metal film is formed on it.

CONSTITUTION: A high-melting-point-metal multilayer film where a high-melting-point- metal silicide film 2 and a high-melting-point-metal film 1 have been formed one after another on an insulating film 3 is formed; and when the film is formed, said high-melting-point-metal silicide film 2 is formed as a polycrystalline structure in a state immediately after its formation. For example, a semiconductor substrate 4, composed of silicon, on which an insulating film 3 composed of SiO2 has been formed is set in one chamber of a CVD apparatus of a multichamber system; a mixed gas of WF6 and SiH2Cl2 is caused to flow as a source gas; Ar is caused to flow as a carrier gas; and a high-melting-point-metal polycrystalline silicide film 2 composed of WSix is precipitated and grown in a thickness of 800 by a low-pressure CVD method. Then, a high-melting-point-metal film 1 composed of W is precipitated and formed in a thickness of 3200 by a blanket CVD method.