Title:
Inactive predominant pulse in plasma processing system
Document Type and Number:
Japanese Patent JP6325448
Kind Code:
B2
Abstract:
A method for processing substrate in a processing chamber, which has at least one plasma generating source and a gas source for providing process gas into the chamber, is provided. The method includes exciting the plasma generating source with an RF signal having RF frequency. The method further includes pulsing the gas source, using at least a first gas pulsing frequency, such that a first process gas is flowed into the chamber during a first portion of a gas pulsing period and a second process gas is flowed into the chamber during a second portion of the gas pulsing period, which is associated with the first gas pulsing frequency. The second process gas has a lower reactant-gas-to-inert-gas ratio relative to a reactant-gas-to-inert-gas ratio of the first process gas. The second process gas is formed by removing at least a portion of a reactant gas flow from the first process gas.
Inventors:
Jacobs Canaryk Keren
Application Number:
JP2014540631A
Publication Date:
May 16, 2018
Filing Date:
November 12, 2012
Export Citation:
Assignee:
LAM RESEARCH CORPORATION
International Classes:
H01L21/3065; H05H1/46
Domestic Patent References:
| JP7226397A | ||||
| JP2006523030A | ||||
| JP2003507880A | ||||
| JP7240379A | ||||
| JP2004134560A | ||||
| JP2008277762A | ||||
| JP2005502198A |
Attorney, Agent or Firm:
Meisei International Patent Office
Yoshinobu Inoue
Yoshinobu Inoue