Title:
FORMATION OF INSULATING FILM
Document Type and Number:
Japanese Patent JPS58148428
Kind Code:
A
Abstract:
PURPOSE:To contrive to improve step coverage of the insulating film without reconstructing a bias sputtering device by a method wherein the second gas being inactive to a target material and a substrate material is added in rare gas. CONSTITUTION:When nitrogen gas (or NH3, CH4, etc.) is added as second gas in rare gas, argon gas for example, namely, in the sputtering condition that argon gas is added by 1 pascal in a chamber 1 exhausted sufficiently to a vacuum, and nitrogen gas is introduced by 1 pascal to hold total gas pressure at 2 pascal, and RF electric power to be applied to the target electrode 7 is made to 1 kilowatt, an inducible bias voltage to the substrate electrode 10 is about -70-90 volt, and althrough the value the same grade with pure argon gas can be obtained, while S.C is improved completely. The effect of improvement of S.C according to the addition of nitrogen gas can be obtained in the partial pressure range of 0.1-3 Pascal nitrogen in relation to 2-4 Pascal total gas pressure.
Inventors:
HAYAMA NOBUYUKI
Application Number:
JP3206582A
Publication Date:
September 03, 1983
Filing Date:
March 01, 1982
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
C23C14/34; H01L21/285; H01L21/31; H01L21/316; (IPC1-7): H01L21/31
Domestic Patent References:
| JPS4817592A | ||||
| JPS5342398A | 1978-04-17 | |||
| JPS5711813A | 1982-01-21 |
Attorney, Agent or Firm:
Naoki Kyomoto (3 outside)