To stably form an ITO coating film high in adhesion and free from overetching at the time of patterning by forming an ITO coating film having an amorphous shape on a translucent substrate under specified sputtering gas pressure at specified intervals between a target and a substrate at a specified coating film forming rate.

A vacuum vessel 21 in a vacuum chamber 20 is exhausted from an exhaust port 28, and gaseous argon contg. a trace amt. of oxygen is fed from a gas introducing port 27. At the time of forming an ITO electrode on a translucent substrate coated with a transparent resin or on a glass substrate 26 by targets 23 to 25 by patterning, the glass substrate 26 is moved in the direction of arrow at the intervals of ≤120 mm from the surface of the targets 23 to 25 as sputtering members, and an ITO electrode is formed on the surface of the glass substrate 26 by sputtering. The pressure of a sputtering gas in the vacuum vessel 21 is regulated to 1.3 to 2.0 Pa, the coating film forming rate is regulated to ≤15 /sec, and the temp. of the substrate is held at ≤100°C, by which the ITO coating electrode converted into amorphous one can be formed.