Title:
FORMATION OF METAL SILICIDE FILM
Document Type and Number:
Japanese Patent JPH07273049
Kind Code:
A
Abstract:
PURPOSE: To provide a method for the formation of metal silicide films wherein increase in wiring resistance and the occurrence of disconnection are prevented without increasing cost.
CONSTITUTION: A tungsten silicide film is formed on a wafer 4 by CVD using WF6 supplied from a WF6 tank 5, SiH4 supplied from a SiH4 tank 6, HCl supplied from a HCQ tank 14 and Ar supplied from an Ar tank 7.
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Inventors:
TSUTSUMI TOSHIAKI
Application Number:
JP6518994A
Publication Date:
October 20, 1995
Filing Date:
April 01, 1994
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
C30B25/14; H01L21/205; H01L21/28; (IPC1-7): H01L21/205; C30B25/14; H01L21/28
Attorney, Agent or Firm:
Takada Mamoru
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