PURPOSE: To improove flatness of an Al film by uniformly forming a TiON film in an atmosphere by means of a mixed gas of a prescribed partial pressure ratio with Ar, N2 and O2 by reactive sputtering using a Ti target followed by piling up Al by a CVD method on a TiON film.
CONSTITUTION: A substrate 60 is housed inside a sputtering chamber 30, reactive sputtering is performed in a sputtering gas atmosphere of a prescribed partial pressure ratio consisting of Ar, N2 and O2 while having Ti plate as a target 32 so as to form a TiON thin film on the substrate 60. Next, the substrate 60 is housed inside a CVD chaber 10, a raw material gas is introduced containing an Al component into the CVD chamber 10 for uniformly performing an Al metal thin film by a vacuum CVD method on the TiON thin film. Thereby, Al is excluded from entering inside the TiON film so as to allow uniform film forming on the TiON film for improving flatness of the Al film.
YAMAMOTO HIROSHI
KONDO HIDEKAZU
OOTA TOMOHIRO
TAKEYASU NOBUYUKI
