To eliminate a faulty connected part by cutting off or removing the film remainder of Cr as well as the film remainder of Ta or TaW in a process for producing a liquid crystal display device using TFD obtained by forming an anodic oxide film on the surface of Ta or TaW and forming a Cr film on the anodic oxide film as a switching element, and to provide a liquid crystal display device having good quality of a displayed image.

An opening 15b for cutting off or removing the film remainder of Ta or TaW is formed in a resist film 15 for separating a wiring part 12b of Ta or TaW formed to supply voltage in anodic oxidation and an element part 12a of Ta or TaW. After dry etching using the resist film, e.g., reactive ion etching (RIE), O2 plasma treatment is carried out while leaving the resist film and then wet etching using an etching solution for Cr is carried out.