Title:
FORMATION OF METALLIC LAYER USING ATOMIC LAYER EVAPORATION PROCESS
Document Type and Number:
Japanese Patent JP3914647
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a method for forming a metal layer using an atomic layer evaporation process which is superior in stepped coating and suitable for a highly integrated semiconductor element.
SOLUTION: In a method for forming a metal layer, a precursor including metal and a reducing gas are reacted to form a sacrificial metal atomic layer on a semiconductor substrate, and a metal atomic layer is formed by depositing metallic atoms into which a metallic halogen compound gas is decomposed on the semiconductor substrate using the metal halogen compound gas capable of reacting with the sacrificial metal atomic layer. Furthermore, a metal atomic layer and a silicon layer are laminated alternately, by further forming a silicon atomic layer on the metallic atomic layer with the use of a silicon source gas. This allows a metal layer or a metal silicide layer which is superior in stepped coating to be formed on the semiconductor substrate.
Inventors:
Kang Nao
Cai Yui
Park Chang Soo
Lee Sou Shinobu
Cai Yui
Park Chang Soo
Lee Sou Shinobu
Application Number:
JP32131698A
Publication Date:
May 16, 2007
Filing Date:
October 26, 1998
Export Citation:
Assignee:
Samsung Electronics Co.,Ltd.
International Classes:
C23C14/06; C23C16/06; H01L21/28; H01L21/285; H01L21/3205; H01L21/768; (IPC1-7): H01L21/28; C23C14/06; C23C16/06; H01L21/285; H01L21/3205
Attorney, Agent or Firm:
Mikio Hatta
Atsushi Nogami
Yasuo Nara
Etsuko Saito
Atsushi Nogami
Yasuo Nara
Etsuko Saito
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