PURPOSE: To form a metallic silicide film having high m.p. and stability and high purity by laminating and disposing alternately a polycrystalline Si film and a metallic film having high m.p. by a chemical vapor deposition treatment then converting the laminated and disposed films to a metallic silicide film by a heating treatment.
CONSTITUTION: A polycrystalline Si film 3 is formed on a gate oxide films 2 formed on an Si substrate 1 by a chemical vapor deposition (CVD) method by thermal decomposition of SiH4 under the reduced pressure. A W film 4 is formed by a CVD method by thermal decomposition of WF6 on said film. Polycrystalline Si films 5, 7 and a W film 6 are thereafter formed alternately in the same way. The films disposed in multiple layers are heat-treated in a nitrogen atmosphere to combine the films 3, 5, 7 and 4, 6 thereby forming a WSix film 8 on the film 2.
OOKUMA TOORU
KANBARA GINJIROU
MATSUMOTO HIROYUKI
| JPS57170814A | 1982-10-21 |
Next Patent: AU ALLOY MEMBER FOR DECORATION HAVING SURFACE HARDENED LAYER