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Title:
FORMATION METHOD OF CHALCOGENIDE SEMICONDUCTOR FILM AND PHOTOVOLTAIC DEVICE
Document Type and Number:
Japanese Patent JP2013065826
Kind Code:
A
Abstract:

To provide a method of forming a chalcogenide semiconductor film, and to provide a photovoltaic device using the chalcogenide semiconductor film.

The method of forming a chalcogenide semiconductor film includes a step for coating a substrate with a precursor solution so as to form a layer, and a step for annealing that layer so as to form a chalcogenide semiconductor film. The precursor solution has a solvent, metal chalcogenide particles 110, and at least one of metal ion and metal complex ion 120 dispersed on the surface of the metal chalcogenide particles. The metals of metal chalcogenide particles, metal ions and metal complex ions are selected from a group having group I, group II, group III and group IV in a periodic table, and have all metal elements 140 of the chalcogenide semiconductor material.


Inventors:
LIAO YUEH-CHUN
YANG FENG-YU
CHO SEI
Application Number:
JP2012166590A
Publication Date:
April 11, 2013
Filing Date:
July 27, 2012
Export Citation:
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Assignee:
DELSOLAR CO LTD
International Classes:
H01L31/04
Domestic Patent References:
JP2011176204A2011-09-08
JPH05175119A1993-07-13
JP2011088808A2011-05-06
JP2009076842A2009-04-09
Foreign References:
US20080280030A12008-11-13
WO2010135665A12010-11-25
WO2009137637A22009-11-12
Attorney, Agent or Firm:
Tadashige Ito
Tadahiko Ito
Shinsuke Onuki



 
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