FORMATION METHOD OF GAS PHASE GROWTH FILM

Title:

FORMATION METHOD OF GAS PHASE GROWTH FILM

Document Type and Number:

Japanese Patent JPS5268879

Kind Code:

A

Abstract:

PURPOSE: To monitor the thickness of film accurately, without influenced with the temperature of formation and the thickness of film, by measuring with specific laser irradiation, at the time of forming the gas phase growth film on the base plate.

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Inventors:

YOSHIMI TAKEO

Application Number:

JP14500875A

Publication Date:

June 08, 1977

Filing Date:

December 08, 1975

Export Citation:

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Assignee:

HITACHI LTD

International Classes:

C30B25/16; G01B11/06; H01L21/205; H01L21/365; (IPC1-7): B01J17/28; G01B11/06; H01L21/365

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