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Title:
FORMATION METHOD OF PHASE CHANGE MEMORY AND FORMATION DEVICE OF PHASE CHANGE MEMORY
Document Type and Number:
Japanese Patent JP2013055258
Kind Code:
A
Abstract:

To provide a formation method of a phase change memory in which the filling properties of a phase change film for a recess in a substrate can be enhanced while minimizing change in composition of the phase change film, and to provide a formation device of the phase change memory.

When forming a phase change memory, a phase change film 24 is formed on the upper surface 23s and in the hole 23h of an insulating film 23 by sputtering a metal chalcogenide target. Subsequently, a cap film 25 for covering the phase change film 24 is formed. Furthermore, reflow for filling the hole 23h with the phase change film 24 is performed by heating the phase change film 24. The cap film 25 is formed of a material that exhibits lower wettability to the phase change film 24 than that to the insulating film 23.


Inventors:
KIKUCHI MAKOTO
MORI DAISUKE
FUKUDA NATSUKI
NISHIOKA HIROSHI
SU HIROTSUNA
Application Number:
JP2011193281A
Publication Date:
March 21, 2013
Filing Date:
September 05, 2011
Export Citation:
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Assignee:
ULVAC CORP
International Classes:
H01L27/105; C23C14/06; H01L45/00
Domestic Patent References:
JP2009038379A2009-02-19
JP2009224787A2009-10-01
JP2011139070A2011-07-14
JPH11145143A1999-05-28
JP2013519229A2013-05-23
Foreign References:
US20060024429A12006-02-02
WO2008041285A12008-04-10
WO2011100079A12011-08-18
US20090035514A12009-02-05
US20090233421A12009-09-17
US6123992A2000-09-26
US20110193045A12011-08-11
US20110155985A12011-06-30
Attorney, Agent or Firm:
Hironobu Onda
Makoto Onda



 
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