PURPOSE: To restore a film to be worked and to repeatedly use a resist silyating process by a method wherein the inspection of the title resist pattern is performed daring an etching operation.

CONSTITUTION: An etching stopper 4 is formed, via a resist layer 3, on a film 2 to be worked on a substrate 1. After that, a resist layer 5 for silyating use is applied to thickness 10% or more of the sum total of its film thickness; an exposure region is formed in a resist silyating layer 6. In addition, a dry etching operation is performed; the surface of the etching stopper 4 is exposed; a developing operation is inspected. When the inspection of the developing operation is passed, the etching stopper 4 is removed, the resist layer 3 is etched and a resist mask is completed. On the other hand, when the inspection is not passed, the resist silyating layer 6 and the resist layer 5 for silyating use which has not been reacted are removed, a resist layer for silyating use is formed again, and an exposure process, a silyating process and an etching process are repeated. Thereby, the resist silyating process can be changed to a reworkable process.