Title:
FORMATION METHOD FOR WIRING FILM
Document Type and Number:
Japanese Patent JP3631392
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To obtain a formation method in which pores in a wiring film formed by a plating method, a chemical vapor deposition method or the like can be made to disappear under a low pressure, by a method wherein the surface of an insulating film on a substrate in which a hole and a groove are formed is covered with copper or a copper alloy, the inside of the hole and that of the groove are filled with a metallic material, and the wiring film is formed.
SOLUTION: A polycrystalline copper film which is composed of fine copper crystal particles is heated and treated under atmospheric pressure or in a high-pressure gas atmosphere, and a wiring film 4 is formed. Fine pores are interposed between the fine copper crystal particles. When the polycrystalline copper film is heated under atmospheric pressure or in a vacuum, the copper crystal particles are grown. Several pores are gathered, and large pores 5 are formed. The diameter of an actual hole 2A and the width of a groove are at 0.2 μm or lower. A region which is at 0.1 μm or lower is effective in growing the crystal particles. When a substrate 1 is maintained at about room temperature even by a PVD method, the film is formed of the crystal particles. The substrate 1 is cooled in a film formation operation in order to prevent that particles which are stuck later become large. The temperature of the substrate can be controlled by a CVD method, and the film which is composed of the fine crystal particles can be obtained at room temperature by a plating method.
Inventors:
Takao Fujikawa
Makoto Kadoguchi
Kohei Suzuki
Mizusawa Nei
Kondo Chiho
Yoji Taguchi
Makoto Kadoguchi
Kohei Suzuki
Mizusawa Nei
Kondo Chiho
Yoji Taguchi
Application Number:
JP6392199A
Publication Date:
March 23, 2005
Filing Date:
March 10, 1999
Export Citation:
Assignee:
KABUSHIKI KAISHA KOBE SEIKO SHO
ULVAC, Inc.
ULVAC, Inc.
International Classes:
H01L21/3205; C23C14/14; C23C14/58; C25D7/12; H01L21/28; H01L21/768; H01L23/52; (IPC1-7): H01L21/3205; C23C14/14; C23C14/58; C25D7/12; H01L21/28; H01L21/768
Domestic Patent References:
| JP9064173A | ||||
| JP8088224A | ||||
| JP2205678A | ||||
| JP3222332A | ||||
| JP11340318A |
Attorney, Agent or Firm:
Toshio Yasuda
Previous Patent: SYNCHRONIZING CIRCUIT SYSTEM AND SYNCHRONIZING CIRCUIT
Next Patent: METHOD FOR PREDICTING TIRE WEAR
Next Patent: METHOD FOR PREDICTING TIRE WEAR