PURPOSE: To enhance an integration density without damaging reliability by a method wherein, before an interlayer insulating film is formed, an interlayer connection layer is formed on a first wiring layer.

CONSTITUTION: A first wiring layer 14 having an interlayer connection layer 14n protruding from the surface is formed in one part on the surface of a substrate 10; after that, an interlayer insulating layer 22A covering the first wiring layer 14 is formed so as to expose the surface top of the interlayer connection layer 14n. Then, a second wiring layer 24 is formed on the interlayer insulating layer 22A so as to come into ohmic contact with the surface top of the interlayer connection layer 22A. Thereby, before the interlayer insulating layer is formed, the interlayer connection layer can be formed surely to be small-sized; accordingly, an integration density and reliability are enhanced.