PURPOSE: To provide a method for forming a multilayer wiring while protecting an interlayer insulation film, a barrier metal layer itself, etc., against crack at the time of high temperature sputtering.

CONSTITUTION: The method for forming a multilayer wiring in a semiconductor device, where a lower wiring layer 14 and an upper wiring layer 22 are connected through a contact hole 16 made through an insulation film 18 deposited on the lower wiring layer 14, comprises a step for forming a barrier metal layer 20 at the bottom, the side wall and the shoulder parts of the contact hole 16, and a step for filling the contact hole with Al by high temperature sputtering or reflowing. This method suppresses cracking of the barrier metal itself, the insulation film, etc., when the contact hole is filled with Al.