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Title:
FORMATION OF OXIDE SUPERCONDUCTING THIN FILM
Document Type and Number:
Japanese Patent JPH02192405
Kind Code:
A
Abstract:

PURPOSE: To form the title thin film with decreased heat treatment temperature by making an electron beam heating, in an oxygen plasma, of at least one kind of material as a single vapor deposition source.

CONSTITUTION: At least one kind of vapor deposition material powder (e.g. Y2O3, BaCO3, CuO) is mixed so as to be a specified composition ratio and repeatedly calcined about twice in air at ca.950°C for ca.12hr. Using the resultant mixture as a single vapor deposition source, an electron beam heating is made, with a vapor deposition apparatus at a vacuum of ≤3.0×10-6Torr, in a high-frequency oxygen plasma 5.0×10-4-7.0×10-4Torr in oxygen partial pressure and ca.360W in high-frequency output, to effect film formation with a specified thickness on a substrate. Thence, heating treatment is made in a high-purity oxygen gas atmosphere at ≥50°C, thus obtaining the objective oxide superconductor thin film ≥4.2K in critical transition temperature or ≥103A/cm3 in critical current density.


Inventors:
TANAKA HIROKI
AOYAMA MASAYOSHI
ONUKI MITSUAKI
Application Number:
JP1079189A
Publication Date:
July 30, 1990
Filing Date:
January 19, 1989
Export Citation:
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Assignee:
HITACHI CABLE
International Classes:
C01B13/14; C01G1/00; C23C14/08; H01B12/06; H01B13/00; H01L39/24; (IPC1-7): C01B13/14; C23C14/08; H01B12/06; H01B13/00; H01L39/24
Attorney, Agent or Firm:
Toshiyuki Usuda



 
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