Title:
FORMATION OF PATTERN OF INSULATING FILM
Document Type and Number:
Japanese Patent JPS6042835
Kind Code:
A
Abstract:
PURPOSE:To obtain the good-quality insulating film by a method wherein when an oxide film or a nitride film of the predetermined pattern is formed on a semiconductor substrate, plural photoresist films of the predetermined sizes are arranged on a semiconductor substrate and such film is deposited by the overall claster ion beam vapor deposition, after which the resist film is removed together with the film deposited on that. CONSTITUTION:Plural photoresist films 21 are formed on a semiconductor substrate 2 with slightly overhanging in order to facilitate the lift-off and a film 22 of SiO2 or Si3N4 is deposited over the whole surface including said films 21 by reactive claster ion beam vapor deposition. Thus, the films 22 are formed on the resist film 21 and the substrate 20 with being isolated from each other and the film 21 is lifted off together with the film 22 formed on that whereas leaving the film 22 on the substrate 20 in the predetermined intervals. Consequently, the formation of an insulating film by the lift-off method, which has been difficult up to now, can be achieved.
Inventors:
TSUKAMOTO KATSUHIRO
Application Number:
JP15189583A
Publication Date:
March 07, 1985
Filing Date:
August 18, 1983
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
C23C14/04; C23C14/32; H01L21/203; H01L21/306; (IPC1-7): C23C14/04; C23C14/32; H01L21/203
Attorney, Agent or Firm:
Masuo Oiwa
Previous Patent: Therapeutic use of anti-CS1 antibody
Next Patent: MANUFACTURE OF SEMICONDUCTOR DEVICE
Next Patent: MANUFACTURE OF SEMICONDUCTOR DEVICE