PURPOSE: To contrive the facilitation of correction of a proximity effect by a method wherein an electron beam sensitive material is exposed with an electron beam of such a low energy that electrons can not thrust through a resist and reach barely to the upper part or intermediate part or so of the resist.
CONSTITUTION: An electron beam resist PMMA 2 is spin coated on a semiconductor substrate 1 and is exposed with an electron beam 3 of such a low energy that electrons reach barely to the upper part or intermediate part or so of the resist 2. Then, the resist is developed, an oxide film 4 is formed thereon to flatten and the film 4 is etched in such a way that the film 4 is left only at developed parts of the electron beam sensitive material. Lastly, the resist PMMA 2 is etched using the film 4 as a mask. Thereby, fine patterns having little proximity effect can be easily obtained.
KAWAKITA KENJI
HASHIMOTO KAZUHIKO
NOMURA NOBORU
