PURPOSE: To provide a method by which a pattern having minimum dimensions which is theoretically close to zero can be formed on a sixth layer by forming a second pattern on a substrate corresponding to a first pattern including a groove or hole of an aimed layer and performing an anisotropic process or anisotropic etching process.

CONSTITUTION: After forming a first layer 2 on a substrate 1, a second layer which has a second pattern corresponding to a first pattern including a groove or hole of an aimed layer and is made of a photoresist is formed on the first layer with light by using a potolithographic method. Then a third layer having a third pattern which is smaller than the second pattern is formed from the second layer by performing isotropic etching on the second layer and a fourth layer is formed from the first layer by performing anisotropic etching on the first layer by using the third layer as a mask. Then a sixth layer which coats the fourth layer from the side is formed on the surface 1 and, by removing the fourth layer from the surface of the substrate 1, the sixth layer is the aimed layer having the pattern including grooves or holes.