FORMATION OF RESISTANCE

Title:

FORMATION OF RESISTANCE

Document Type and Number:

Japanese Patent JPH04324672

Kind Code:

A

Abstract:

PURPOSE: To form a high resistor, a low resistor and an electrode or a wiring with a small number of process.

CONSTITUTION: After an insulating film 18 for an etching mask is formed on a poly-Si layer of high resistivity, a silicide layer of low resistivity is formed covering the poly-Si layer and the insulating film 18. A laminated layer of the poly-Si layer and the silicide layer is patterned by selective etching process using resist layers 22A, 22G, and the insulating film 18 as masks. As the results, the following are obtained at the same time; a low resistor A composed of residual parts 16A, 20A of the laminated layer, a gate electrode (or wiring) G, composed of residual parts 16G, 20G of the laminated layer, and a high resistor B composed of a residual part 16B of the poly-Si layer.

Inventors:

ISHIDA KATSUHIKO

Application Number:

JP12210291A

Publication Date:

November 13, 1992

Filing Date:

April 24, 1991

Export Citation:

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Assignee:

YAMAHA CORP

International Classes:

H01L21/28; H01L21/306; H01L21/3205; H01L21/822; H01L27/04; (IPC1-7): H01L21/28; H01L21/306; H01L21/3205; H01L27/04

Attorney, Agent or Firm:

Toshiaki Izawa

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