Title:
FORMATION OF SEMICONDUCTOR ELEMENT ISOLATION FILM
Document Type and Number:
Japanese Patent JP3958454
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a method for forming a semiconductor element isolation film suitable for improving the performance of element isolation.
SOLUTION: This method includes a process in which an antioxidation film pattern 32a is formed on a semiconductor substrate 30, a process by which the substrate 30 is etched with the antioxidation preventive film pattern 32a as a mask to form a trench, a process in which impurity ions are implanted on the bottom face of the trench, and a process wherein a field oxide film 37 is formed in the trench through thermal oxidation.
More Like This:
| JPS5874050 | SEMICONDUCTOR DEVICE |
| JPH0230161 | MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE |
Inventors:
Shin Hyun Sook
Chayoung Gook
Chayoung Gook
Application Number:
JP35126498A
Publication Date:
August 15, 2007
Filing Date:
December 10, 1998
Export Citation:
Assignee:
HYNIX SEMICONDUCTOR INC.
International Classes:
H01L21/76; H01L21/316; (IPC1-7): H01L21/76
Domestic Patent References:
| JP9106984A | ||||
| JP5251437A | ||||
| JP4151852A | ||||
| JP56140646A | ||||
| JP10050693A |
Attorney, Agent or Firm:
Hironobu Onda
Previous Patent: PRECAST CONCRETE MEMBER JOINING STRUCTURE
Next Patent: VIBRATOR, VIBRATING GYROSCOPE AND LINEAR ACCELEROMETER
Next Patent: VIBRATOR, VIBRATING GYROSCOPE AND LINEAR ACCELEROMETER