Title:
FORMATION OF SEMICONDUCTOR JUNCTION
Document Type and Number:
Japanese Patent JPS62226671
Kind Code:
A
Abstract:
The process of the invention includes applying precursors 6 with N- and P-type dopants therein to a silicon web 2, with the web 2 then being baked in an oven 10 to drive off excessive solvents, and the web 2 is then heated using a pulsed high intensity light in a mechanism 12 at 1100 DEG -1150 DEG C. for about 10 seconds to simultaneously form semiconductor junctions in both faces of the web.
Inventors:
ROBAATO BURUUSU KIYANBERU
Application Number:
JP31613686A
Publication Date:
October 05, 1987
Filing Date:
December 26, 1986
Export Citation:
Assignee:
WESTINGHOUSE ELECTRIC CORP
International Classes:
H01L31/04; H01L21/22; H01L21/225; H01L21/268; (IPC1-7): H01L21/22; H01L21/225; H01L31/04
Domestic Patent References:
| JPS55127016A | 1980-10-01 | |||
| JPS5552221A | 1980-04-16 | |||
| JPS58186933A | 1983-11-01 | |||
| JPS56100412A | 1981-08-12 |
Attorney, Agent or Firm:
Koichiro Kato (1 person outside)
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