Title:
FORMATION OF SEMICONDUCTOR LAYER ON INSULATED SUBSTRATE
Document Type and Number:
Japanese Patent JPS5671953
Kind Code:
A
Abstract:
PURPOSE:To obtain an epitaxial layer not lowering in transferability by reducing to a desired value the large thickness given to the expitaxial growth of a semiconductor layer on an insulated substrate of sepphire for example with Si ion injection, heat- treatment and etching repeated several times. CONSTITUTION:The epitaxial growth of an Si layer for forming a semiconductor device such as transistor on an insulated substrate of sapphire for example is made to have a large thickness of about 3mum and the crystallinity thereof is equalized to that of bulk Si. Next Si atom ions 3 are injected at a rate of about 1X10<16>/cm<3> so as to reach a depth of 6,000Angstrom , work is heat-treated in N2 gas at 600 deg.C for 5hr, and the only the portion at about 5,000Angstrom of the ions is removed using an aqueous KOH solution. These steps of treatment are repeated to reduce the thickness of the layer 2 to a desired value 0.5mum. Thereby, the transferability of the residual layer 2 becomes about 85% of that of bulk Si, i.e. a quality grown layer 2 with a small reduction in transferability is obtained.
Inventors:
OOMORI YUKIO
TANGO HIROIKU
TANGO HIROIKU
Application Number:
JP14885379A
Publication Date:
June 15, 1981
Filing Date:
November 19, 1979
Export Citation:
Assignee:
TOKYO SHIBAURA ELECTRIC CO
International Classes:
H01L21/205; H01L21/86; (IPC1-7): H01L21/205