FORMATION OF TANTALUM OXIDE FILM AND ITS DEVICE

Title:

FORMATION OF TANTALUM OXIDE FILM AND ITS DEVICE

Document Type and Number:

Japanese Patent JPH09153491

Kind Code:

A

Abstract:

PROBLEM TO BE SOLVED: To simplify the process to produce a high-grade product by executing steps of vapor depositing a Ta oxide film and annealing it in situ in the same chamber. SOLUTION: In a vapor deposition apparatus for forming a Ta oxide film usable high-dielectric films of capacitors in a semiconductor memory device, the internal temp. in a chamber to sequentially execute a Ta oxide film vapor deposition step and annealing step is risen up to 350-450deg.C, the Ta oxide film is vapor-deposited in the chamber at 350-450deg.C. Then, the temp. in the chamber is fallen to 250-350deg.C and the process goes to a post-stage to fill up oxygen holes in the Ta oxide film formed in the vapor deposition step, i.e., an UV-O3 annealing stage.

Inventors:

BOKU EIKIYOKU
RI BUNYOU
KIN KEIKUN
BOKU JINSEI

Application Number:

JP22867596A

Publication Date:

June 10, 1997

Filing Date:

August 29, 1996

Export Citation:

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Assignee:

SAMSUNG ELECTRONIC

International Classes:

C23C16/48; C23C16/40; C23C16/46; C23C16/56; H01L21/02; H01L21/285; H01L21/31; H01L21/316; H01L21/822; H01L21/8242; H01L27/04; H01L27/108; H01L21/314; (IPC1-7): H01L21/316; C23C16/48; C23C16/56; H01L21/31; H01L21/324; H01L27/04; H01L21/822; H01L27/108; H01L21/8242

Attorney, Agent or Firm:

Mikio Hatta (1 outside)

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