Title:
FORMATION OF THIN FILM OF SEMICONDUCTOR
Document Type and Number:
Japanese Patent JPH02277763
Kind Code:
A
Abstract:
PURPOSE: To form a thin film of a semiconductor having satisfactory electrical characteristics as deposited by spraying a plasma jet obtd. by melting powdery starting material for the thin film on a substrate.
CONSTITUTION: Ions or atomic gas of an element for reducing defect density is fed into an evacuated vessel 1 and a substrate 8 is set in the vessel 1. A plasma jet 7 obtd. by melting powdery starting material for a thin film 9 of a semiconductor to be formed is sprayed on the substrate 8. Fluorine is used as the element for reducing defect density. The characteristics of the resulting thin film 9 is improved.
Inventors:
IWAMOTO MASAYUKI
MINAMI KOJI
YAMAOKI TOSHIHIKO
MINAMI KOJI
YAMAOKI TOSHIHIKO
Application Number:
JP10077789A
Publication Date:
November 14, 1990
Filing Date:
April 20, 1989
Export Citation:
Assignee:
SANYO ELECTRIC CO
International Classes:
B01J19/08; C23C4/12; H01L21/208; (IPC1-7): B01J19/08; C23C4/12; H01L21/208
Attorney, Agent or Firm:
Koji Yasutomi (1 person outside)
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