Title:
FORMATION OF WIRING OF SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JP3160811
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide formation method of the wiring of a semiconductor element which can raise the reliability and mass-production of the element by removing fluorine left in a barrier metal layer in the element.
SOLUTION: A process of forming a first insulating layer 20 on the upper surface of a semiconductor substrate 10 having an impurity region 11, a process wherein the layer 20 located on the upper surface of the region 11 is removed in such a way that one part of the upper surface of the region 11 is exposed to form a first contact hole 21, a process of forming a first barrier metal layer 30 on the inner side surface of the hole 21 and the upper surface of the layer 20, a process of forming a first metal layer 40 on the upper surface of the layer 30, a process wherein one part of the layer 40 is removed to form a first metal layer plug 41 in the hole 21, and a process of performing a hydrogen plasma treatment and a nitrogen plasma treatment on the exposed part of the layer 30, are conducted in order and the wiring of a semiconductor element is formed.
Inventors:
Jeon-Eui Hong
Application Number:
JP24537299A
Publication Date:
April 25, 2001
Filing Date:
August 31, 1999
Export Citation:
Assignee:
Hyundai Microelectronics Company Limited
International Classes:
H01L21/3213; H01L21/28; H01L21/285; H01L21/3205; H01L21/768; H01L23/52; (IPC1-7): H01L21/3205
Domestic Patent References:
| JP8306781A | ||||
| JP8337875A | ||||
| JP11265889A |
Attorney, Agent or Firm:
Fumio Sasashima (1 person outside)