FORMING METHOD OF ALUMINUM CONTACT - APPLIED MATERIALS INC

Title:

FORMING METHOD OF ALUMINUM CONTACT

Document Type and Number:

Japanese Patent JPH09181179

Kind Code:

A

Abstract:

PROBLEM TO BE SOLVED: To provide a forming method of contact wherein a titanium layer is not deposited between an sputtered oxygenated TiN layer and an upper aluminum layer, and the wettability between the layers is improved. SOLUTION: A titanium layer is sputtered and deposited in a contact aperture of a semiconductor substrate 24. A thin titanium oxide layer is formed on the titanium layer. A titanium nitride layer is sputtered and deposited on the titanium oxide layer. The titanium nitride layer is smoothed by argon plasma 26. An aluminum contact layer is sputtered and deposited on the titanium nitride layer. The surface of the titanium nitride layer is smoothed by the argon plasma treatment, and wettability between the titanium nitride layer and aluminum is improved.

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Inventors:

JIYANMIN FUU
TSUEN SHIYUU

Application Number:

JP31219796A

Publication Date:

July 11, 1997

Filing Date:

November 22, 1996

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Assignee:

APPLIED MATERIALS INC

International Classes:

C23C14/06; C23C14/02; C23C14/16; C23C14/34; H01L21/28; H01L21/285; H01L21/321; H01L21/768; H01L23/522; (IPC1-7): H01L21/768; C23C14/06; C23C14/34; H01L21/285

Attorney, Agent or Firm:

Yoshiki Hasegawa (3 outside)

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