PURPOSE: To form a film of necessary thickness in a short time while obtaining film quality by forming the film by a continuous discharge at the initial of forming by a plasma CVD method, and then forming it to a necessary thickness by an intermittent discharge.
CONSTITUTION: A high frequency power source 11 is operated to apply a continuous high-frequency power 15 between a high-frequency electrode 2 and a ground electrode 3, the electrodes are continuously discharged therebetween, and an amorphous silicon thin film is formed on a rear surface of a substrate 4. The high frequency power is so set to 100W as not to generate particles. After the continuous discharge of 10min is finished, a waveform shaper 13 is operated, an output of the power source 11 is varied to an amplitude-modulation high frequency power 16, an intermittent discharge is generated between the electrodes 2 and 3 to continue the formation of the film. Thus, a film forming time can be significantly shortened.
WATABE YOSHI
UEDA HITOSHI
| JPS62216637A | 1987-09-24 | |||
| JPH01252782A | 1989-10-09 | |||
| JP2092922B |