Title:
FORMING METHOD OF BEVEL STRUCTURE OF SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JPS6195531
Kind Code:
A
Abstract:
PURPOSE:To prevent the deformation of the bevel structure caused by scattered sand, by holding the semiconductor layer with the piece finished up as the shape having the nearly equal inclination angle to the bevel structure, and applying the sandblast forming from the same direction with the holding surface or from the inverse direction. CONSTITUTION:The side of the anode electrode 5 is previously finished up as the nearly the same shape with the bevel structure. The Si substrate 10 to form the bevel structure is stuck to the anode with aluminium and brazing filler metals and the like. The cathode side is fixed on the rotary jig 8 through the supporting plate 11. The nozzle 9 spouts sand with high speed along the inclination of the side of the anode electrode 5 under the operation of the rotary jig 8. The anode electrode 5 operates as the guide for sand flow and the sand scatters outwards without the reflection from the supporting plate 11, so that the desired bevel structure can be easily formed.
Inventors:
KAWAMURA TAKAYASU
Application Number:
JP21680084A
Publication Date:
May 14, 1986
Filing Date:
October 16, 1984
Export Citation:
Assignee:
MEIDENSHA ELECTRIC MFG CO LTD
International Classes:
H01L21/304; (IPC1-7): H01L21/304
Domestic Patent References:
| JPS5832617A | 1983-02-25 | |||
| JPS5538693A | 1980-03-18 |
Attorney, Agent or Firm:
Fujiya Shiga