PURPOSE: To provide a forming method of buried plug capable of selectively forming the buried plug comprising a low resistant Al metal of good quality.
CONSTITUTION: A wiring metallic film 3 is formed on an SiO2 film 2 so as to form an interlayer insulating film 4 on this wiring metallic film 3. This insulating film 4 is selectively removed to form a via hole 40. Next, DMAH gas is fed to selectively form a pure Al metal 5 inside this via hole 4a. Next, the feeding of the DMAH gas is stopped to be substituted with CpCuTEP gas to selectively form a Cu film 6 only on the Al metal 5. Later, the Cu film 6 is heat-treated to diffuse Cu into the Al metal 5 to selectively form a buried plug comprising AlCu. Besides, the residual Cu film 5 not yet completely diffused into the Al metals is to be removed.
KATAGIRI TOMOHARU
KONDO HIDEKAZU
OOTA TOMOHIRO