FORMING METHOD OF CARBON NANOTUBE INTERCONNECTION, AND FORMING METHOD OF SEMICONDUCTOR ELEMENT INTERCONNECTION USING THE SAME

Title:

FORMING METHOD OF CARBON NANOTUBE INTERCONNECTION, AND FORMING METHOD OF SEMICONDUCTOR ELEMENT INTERCONNECTION USING THE SAME

Document Type and Number:

Japanese Patent JP2008085336

Kind Code:

A

Abstract:

To provide a method of forming a carbon nanotube interconnection which does not cause interface breakdown phenomenon, and a method for forming a semiconductor element interconnection using thereof.

This method of forming a carbon nanotube interconnection comprises the steps of: forming an oxide metal film on a substrate; forming an insulating film pattern having an opening that exposes the surface of the oxide metal film; forming a catalyst metal film pattern for carbon nanotube growth from the oxide metal film that is exposed in the opening; and forming a carbon nanotube interconnection by growing the carbon nanotubes from the catalyst metal film pattern. The method of forming a carbon nanotube interconnection can prevent the phenomenon of growing the carbon nanotubes between the insulating film pattern and the catalyst metal film pattern.

Inventors:

LEE SUN-WOO
YEO IN SEOK
LEE JUN YOUNG
KIM JUNG HYEON
YOON HONG SIK
BYUN KYUNG-RAE

Application Number:

JP2007247337A

Publication Date:

April 10, 2008

Filing Date:

September 25, 2007

Export Citation:

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Assignee:

SAMSUNG ELECTRONICS CO LTD

International Classes:

H01L21/3205; C23C14/08; C23C14/14; C23C14/16; C23C16/06; C23C16/40; H01L21/28; H01L21/285; H01L21/768; H01L23/52; H01L27/105

Attorney, Agent or Firm:

Masatake Shiga
Takashi Watanabe
Yasuhiko Murayama
Shinya Mitsuhiro

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