Title:
FORMING METHOD FOR INDIUMMANTIMONY THIN FILM
Document Type and Number:
Japanese Patent JPS5515285
Kind Code:
A
Abstract:
PURPOSE:To permit an application to a magnetic electric conversion element of a thin film having a nature different from that of a single crystal bulk, by bonding an impurity atom or its ion on a substrate for thin film formation, thereafter placing a InSb thin film thereon and by causing the thin film to recrystlize by a heat treatment. CONSTITUTION:A very slight amount of a Sn layer 2 is mounted by a vaccum vaporation or a spatter method on a thin film forming substrate 1 and a InSb thin film 3 is formed by the vaccum vaporation method thereon. Successively, In order to prevent an oxidization in the heat treatment and an evenness in the thickness at the recrystlization time, the film 2 is covered with a SiO2 film 4, it is heated in the Ar gas atmosphere over 55 deg.C, to obtain the recystalization of the film 3. Whereby the IsSb thin film including Sn can be obtained, a hole element is pattern etched in an appropriate shape, an opening is given to the film 4 and a Ni-Cu electrode film 5 adjacent to the film 3 is extended on the film 4 and bonded thereto. Thereafter, an electorde 6 is soldered to the above film. This hole element has an excellent electron transfer rate, magnetic sensibility and input/output resistance.
Inventors:
ARAI MASAJI
Application Number:
JP8906378A
Publication Date:
February 02, 1980
Filing Date:
July 20, 1978
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H01L43/12; H01L21/203; (IPC1-7): H01L21/203; H01L43/12