Title:
FORMING METHOD OF LOW-RESISTANCE WIRING
Document Type and Number:
Japanese Patent JPH07176525
Kind Code:
A
Abstract:
PURPOSE: To enable a low resistance wiring with no abnormal projections caused by heating to be formed through a less number of processes at a low cost.
CONSTITUTION: A metal film 12 of Al or Al alloy is patterned by etching, using an etchant (mixed etchant composed of 16 parts by volume of phosphoric acid, 2 to 8 parts by volume of nitric acid, and one part by volume of water) which has a higher nitric acid concentration than conventional etchant. A wiring 12a is formed by patterning, and consequently an oxide film thick enough to prevent abnormal projections from occurring due to heating is formed on the side face of the wiring 12a.
Inventors:
KAMIYA KENJI
ONO ICHIRO
ONO ICHIRO
Application Number:
JP34464193A
Publication Date:
July 14, 1995
Filing Date:
December 21, 1993
Export Citation:
Assignee:
CASIO COMPUTER CO LTD
International Classes:
G02F1/1343; C23F1/00; C23F1/20; H01L21/306; H01L21/308; H01L21/3205; H01L21/3213; H01L23/52; H01L29/78; H01L29/786; H05K3/06; (IPC1-7): H01L21/308; C23F1/00; C23F1/20; H01L21/306; H01L21/3205; H01L21/3213; H01L29/786; H05K3/06