Title:
FORMING METHOD FOR PATTERN
Document Type and Number:
Japanese Patent JPS5957432
Kind Code:
A
Abstract:
PURPOSE:To improve dry etching capability as excellent characteristics of a resist being left as they are maintained by irradiating radiation to a resist pattern obtained or exposing the resist pattern in a gas, which does not form a film, and exposing the resist pattern in the vapor of an organic compound. CONSTITUTION:A resist film is formed on a substrate, radiation is irradiated to the resist film, the desired resist pattern is formed on the substrate through development, radiation is irradiated to the resist pattern obtained or the resist pattern obtained is exposed to the gas, which does not form the film, and the resist pattern is exposed to the vapor of the organic compound. gamma-Rays, electron beams, X-rays, alpha-rays, neutron beams, ion beams, ultraviolet rays or far ultraviolet rays or the like are used as radiation, and rare gases, such as argon, helium, neon, etc., hydrogen, nitrogen, carbon tetrachloride, perfluoro-saturated hydrocarbon such as tetrafluorocarbon, ammonia or the like is used as the gas generating plasma. A compound with an aromatic ring and functional groups, such as styrene, chlorostyrene or the like is used as the organic compound to be employed.
Inventors:
KITAMURA TATEO
YONEDA YASUHIRO
MIYAGAWA MASASHI
YONEDA YASUHIRO
MIYAGAWA MASASHI
Application Number:
JP16750782A
Publication Date:
April 03, 1984
Filing Date:
September 28, 1982
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
G03F7/16; G03F7/40; H01L21/027; (IPC1-7): G03F7/26
Attorney, Agent or Firm:
Aoki Akira
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