Title:
FORMING METHOD FOR PPTYPE BORON PHOSPHIDE SEMICONDUCTOR
Document Type and Number:
Japanese Patent JPS53108277
Kind Code:
A
Abstract:
PURPOSE:To secure a vapor growth of good-quality P-type BP onto the single crystal substrate from PCl3 and B2H6, by using N2 which contains N2, the rare gas or H2 of under 90-volume % or the mixture gas of these two for the carrier gas.
Inventors:
NAGANO KATSUTO
SASA SHIYOUZOU
NAKADA TAKESHI
ASAKAWA YUKIO
SASA SHIYOUZOU
NAKADA TAKESHI
ASAKAWA YUKIO
Application Number:
JP2318877A
Publication Date:
September 20, 1978
Filing Date:
March 03, 1977
Export Citation:
Assignee:
TDK ELECTRONICS CO LTD
International Classes:
C30B25/02; C30B29/40; H01L21/205; (IPC1-7): B01J17/32; H01L21/205