Title:
FORMING METHOD FOR SILICON OXYNITRIDE FILM
Document Type and Number:
Japanese Patent JP2005159138
Kind Code:
A
Abstract:
To provide a more efficient forming method for a silicon oxynitride film by exploiting respective characteristics of thermal reaction method and plasma excitation method, and further carrying out thermal decomposition of N2O gas before irradiating the substrate therewith.
Only N2O gas is used as a reactant gas, and the plasma excitation for promoting the nitriding reaction of N2O gas and the thermal excitation for promoting the oxidizing reaction of N2O gas are controlled independently. The surface of a sample substrate is simultaneously exposed to the reactant gas processed according to respective excitation methods to form the silicon oxynitride film.
Inventors:
TODA YOSHIHARU
TAKEDA SOUTARO
TAKEDA SOUTARO
Application Number:
JP2003397529A
Publication Date:
June 16, 2005
Filing Date:
November 27, 2003
Export Citation:
Assignee:
TOHOKU TECHNO ARCH CO LTD
International Classes:
H01L21/318; H01L29/78; (IPC1-7): H01L21/318; H01L29/78
Attorney, Agent or Firm:
Kazuo Shigenobu
Hideo Shimizu
Yuichi Takagi
Kazuki Hidaka
Tomoko Watanabe
Hideo Shimizu
Yuichi Takagi
Kazuki Hidaka
Tomoko Watanabe
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