Title:
FORMING METHOD OF SINGLE CRYSTAL SILICON MEMBRANE AND DEVICE THEREFOR
Document Type and Number:
Japanese Patent JPS56145198
Kind Code:
A
Abstract:
PURPOSE:Polycrystals are made to grow on a base plate and simultaneously laser beams or electron beams are irradiated on the polycrystals to convert them into a single crystal, thus forming a large-size single crystal silicon film with a film thickness on the base plate kept in the reactor. CONSTITUTION:A base plate, or wafer W, is placed on the hot plate 7 in the reactor 1 and made to rotate. A nitrogen gas is introduced from pipe 2 to effect purge using pipe 4. After thorought purge, the wafer W is heated with the heating means 8 and an SiH4 gas is introduced through pipe 3 into the reactor. At the same time, e.g., the wafer is irradiated with laser beams projected from the laser emitter 9 on the surface. The laser uniformly irradiated the surface of wafer W by the synchronous motions of the vibrating mirro 10 and the heating plate 7. Accordingly, polycrystals grows on the surface of the wafer W by the CVD method, meanwhile the laser beams anneals the polycrystal silicon to convert it into a single crystal, whereby a single crystal silicon membrane is formed on the surface of the wafer W.
Inventors:
TOCHIKUBO HIROO
KANAI AKIRA
KANAI AKIRA
Application Number:
JP4357780A
Publication Date:
November 11, 1981
Filing Date:
April 04, 1980
Export Citation:
Assignee:
HITACHI LTD
International Classes:
C30B1/02; C30B29/06; H01L21/20; (IPC1-7): C30B1/02; C30B29/06; H01L21/20